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  • 12-04-2024
  • Chemistry
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A Si nanowire ( 100 nm radius) is oxidized in steam at 1,000∘C for 0.25hr. What is the radius of Si region in the middle? (Assume that the reaction rate constant for oxide growth does not depend on the crystal orientation. Thickness of Si consumed =0.45× thickness of SiO₂grown)

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